HFM101 thru hfm108 50v-1000v 1.0a mechanical data web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics * e p o x y : d e v i c e h a s u l f l a m m a b i l i t y c l a s s i f i c a t i o n 9 4 v - 0 surface mount glass passivated high efficiency silicon rectifier * glass passivated device * ideal for surface mounted applications * low leakage current * metallurgically bonded construction * mounting position: any * weight: 0.057 gram maximum ratings (at t a = 25 o c unless otherwise noted) ratings maximum recurrent peak reverse voltage maximum rms volts maximum dc blocking voltage maximum average forward current at t a = 50 o c peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) typical junction capacitance (note 2) operating and storage temperature range symbol v rrm v dc i o i fsm c j t j , t stg v rms volts volts volts amps 1.0 30 15 -65 to + 150 amps pf 0 c units 12 HFM101 50 35 50 hfm102 100 70 100 hfm104 300 210 300 hfm105 400 280 400 hfm107 800 560 800 hfm108 1000 700 1000 hfm103 200 140 200 hfm106 600 420 600 electrical characteristics (at t a = 25 o c unless otherwise noted) notes : 1. t est conditions: i f =0.5a, i r =-1.0a, i rr =-0.25a. 2. measured at 1 mh z and applied reverse voltage of 4.0 volts. maximum dc reverse current at characteristics v f symbol i r trr units uamps nsec maximum full load reverse current, full cycle average t a = 55 o c maximum forward voltage at 1.0a dc volts 5.0 50 maximum reverse recovery time (note 1) rated dc blocking voltage HFM101 hfm106 hfm103 hfm107 hfm108 hfm104 50 uamps 1.0 1.7 75 hfm102 hfm105 1.3 @t a = 25 o c @t a = 125 o c 100 uamps pulse energy, non repetitive(inductive load switch off ) er 20 mj
ratings and characteristic curves HFM101 thru hfm108 e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 HFM101 thru hfm108 50v-1000v 1.0a surface mount glass passivated high efficiency silicon rectifier fig. 1 - test circuit diagram and reverse recovery time characteristic 50 noninductive 10 noninductive d.u.t 25 vdc (approx) ( - ) ( - ) ( + ) ( + ) 1 non- inductive oscilloscope (note 1) pulse generator (note 2) notes: 1 rise time = 7ns max. input impedance = 1 megohm. 22pf. 2. rise time = 10ns max. souce impedance = 50 ohms. trr +0.5a 0 -0.25a -1.0a 1cm set time base for 10/20 ns/cm fig. 2 - typical forward current derating curve average forward curent, (a) ambient temperature ( ) 2.0 1.0 0 25 50 75 100 125 150 175 0 single phase half wave 60hz resistive or inductive load fig. 4 - typical instantaneous forward characteristics instantaneous forward current, (a) instantaneous forward voltage, (v) 10 1.0 .1 .01 .001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 pulse width = 300us 1% duty cycle t j = 25 hfm106~hfm108 HFM101~hfm103 hfm104~hfm105 fig. 3 - typical reverse characteristics instantaneous reverse current, (ua) percent of rated peak reverse voltage, (%) t j = 25 t j = 100 t j = 150 100 10 1.0 .1 .01 40 0 20 60 80 100 120 140 fig. 6 - typical junction capacitance junction capacitance, (pf) reverse voltage, ( v ) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 HFM101~hfm105 hfm106~hfm108 t j = 25 fig. 5 - maximum non-repetitive forward surge current peak forward surge current, (a) number of cycles at 60hz 70 60 50 40 30 20 10 0 1 2 5 10 20 50 100 8.3ms single half sine-wave (jedec method)
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